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零件编号
产品描述 (功能)
2SA885 查看數據表(PDF) - Panasonic Corporation
零件编号
产品描述 (功能)
生产厂家
2SA885
Silicon PNP epitaxial planar type
Panasonic Corporation
2SA885 Datasheet PDF : 4 Pages
1
2
3
4
2SA0885
Power Transistors
P
C
T
a
6
(1)With a 100
×
100
×
2mm
Al heat sink
(2)Without heat sink
5
4
(1)
3
2
(2)
1
0
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature T
a
(˚C)
I
C
V
CE
–
1.5
T
C
=25
˚
C
–
1.25
–
1.0
I
B
=
–
10mA
–
9mA
–
8mA
–
7mA
–
0.75
–
0.5
–
6mA
–
5mA
–
4mA
–
3mA
–
0.25
–
2mA
–
1mA
0
0
–
2
–
4
–
6
–
8
–
10
Collector to emitter voltage V
CE
(V)
I
C
I
B
–
1.2
–
1.0
V
CE
=
–
10V
T
C
=25
˚
C
–
0.8
–
0.6
–
0.4
–
0.2
0
0
–
2
–
4
–
6
–
8
–
10
–
12
Base current I
B
(mA)
V
CE(sat)
I
C
–
10
I
C
/I
B
=10
–
3
–
1
–
0.3
T
C
=100
˚
C
25
˚
C
–
0.1
–
25
˚
C
–
0.03
–
0.01
–
0.01
–
0.03
–
0.1
–
0.3
–
1
Collector current I
C
(A)
V
BE(sat)
I
C
–
10
I
C
/I
B
=10
–
3
–
1
T
C
=
–
25
˚
C
100
˚
C
–
0.3
25
˚
C
–
0.1
–
0.03
–
0.01
–
0.01
–
0.03
–
0.1
–
0.3
–
1
Collector current I
C
(A)
1000
300
100
h
FE
I
C
V
CE
=
–
10V
T
C
=100
˚
C
25
˚
C
–
25
˚
C
30
10
3
1
–
0.01
–
0.03
–
0.1
–
0.3
–
1
Collector current I
C
(A)
200
V
CB
=
–
10V
180 f=200MHz
T
C
=25
˚
C
160
f
T
I
E
140
120
100
80
60
40
20
0
1
3
10
30
100
Emitter current I
E
(mA)
C
ob
V
CB
50
I
E
=0
45
f=1MHz
T
C
=25
˚
C
40
35
30
25
20
15
10
5
0
–
1
–
3
–
10
–
30
–
100
Collector to base voltage V
CB
(V)
–
100
–
80
V
CER
R
BE
I
C
=
–
10mA
T
C
=25
˚
C
–
60
–
40
–
20
0
0.1 0.3 1 3 10 30 100
Base to emitter resistance R
BE
(k
Ω
)
2
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