BSM 50 GD 120 DN2G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 50 A
RGon = 22 Ω
-
44
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 50 A
RGon = 22 Ω
-
56
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 50 A
RGoff = 22 Ω
-
380
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 50 A
RGoff = 22 Ω
-
70
ns
100
100
500
100
Free-Wheel Diode
Diode forward voltage
IF = 50 A, VGE = 0 V, Tj = 25 °C
IF = 50 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
IF = 50 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
IF = 50 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
VF
-
-
trr
-
Qrr
-
-
V
2.3
2.8
1.8
-
µs
0.2
-
µC
2.8
-
8
-
Semiconductor Group
3
Aug-23-1996