Philips Semiconductors
Low power dual-band GSM transceiver
with an image rejecting front-end
Objective specification
UAA3522HL
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
ϕN(DCS)
Vfph(comp)(spur)
Io(cp)
IL(cp)(off)
Vo(cp)
DCS close-in phase
noise
phase comparator
frequency spurii
breakthrough level
charge pump output
current
charge pump leakage
current in off-state
charge pump output
voltage
within the closed-loop bandwidth −
Pxtal = 0 dBm; fLO(RF) = 1.6 GHz
foffset = 200 kHz; second-order loop −
filter closed-loop
bandwidth = 11 kHz
sink or source current; at Vo(cp)
1.8
−5
Io(cp) within specified values
0.4
−79 −74
−75 −60
2.2 2.6
− +5
−
VCC − 0.4
IF SYNTHESIZER (PINS IFLOC, IFLOE AND CPOIF)
fLO(IF)
fph(comp)
ϕN
IF LO frequency
phase comparator
frequency
close-in phase noise
Vfph(comp)(spur)
phase comparator
frequency spurii
breakthrough level
within the closed-loop bandwidth
Pxtal = 0 dBm; fLO(IF) = 400 MHz
foffset = 1 MHz; second order loop
filter closed-loop
bandwidth = 25 kHz
380 400 440
−
1−
−
−95 −85
−
−75 −60
Io(cp)
IL(cp)(off)
Vo(cp)
charge pump output
current
charge pump leakage
current in off-state
charge pump output
voltage
sink or source current; at Vo(cp)
0.75 1.1 1.35
−5 − +5
0.4 −
VCC − 0.4
Frequency dividers
D/DfLO(RF)
D/DfLO(IF)
D/Dfref(RF)
D/Dfref(IF)
RF frequency
programmable divider
ratio
IF frequency
programmable divider
ratio
RF reference frequency fixed ratio
divider ratio
IF reference frequency
divider ratio
5200 − 8600
−
200 −
−
65 −
−
13 −
General IC specification
tON
switch-on time
90% of the final current
−
− 10
UNIT
dBc/Hz
dBc
mA
nA
V
MHz
MHz
dBc/Hz
dBc
mA
nA
V
µs
2000 Feb 18
18