STB4NK60Z-1_11 查看數據表（PDF） - STMicroelectronics

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STB4NK60Z-1_11

N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP

STMicroelectronics 

Electrical characteristics

Figure 8. Transconductance

STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP

Figure 9. Static drain-source on resistance

Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations

Figure 12. Normalized gate threshold voltage Figure 13. Normalized BVDSS vs temperature

vs temperature

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Doc ID 8882 Rev 7

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