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零件编号
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BF1105R 查看數據表(PDF) - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
BF1105R
N-channel dual-gate MOS-FETs
NXP Semiconductors.
BF1105R Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1105; BF1105R; BF1105WR
handbook, full pagewidth
VG2
VDS
4.7 nF
Rgen
50
Ω
Vi
10 k
Ω
47
μ
H
4.7 nF
G2
D
BF1105
10 nF
BF1105R
G1
BF1105WR
S
10 nF
50
Ω
R1 =
50
Ω
MGM257
Fig.18 Cross-modulation test set-up.
Table 1
Scattering parameters: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 12 mA
f
(MHz)
S
11
MAGNITUDE
(ratio)
ANGLE
(deg)
S
21
MAGNITUDE
(ratio)
ANGLE
(deg)
S
12
MAGNITUDE
(ratio)
50
100
200
300
400
500
600
700
800
900
1 000
0.994
0.991
0.982
0.968
0.956
0.937
0.918
0.897
0.878
0.858
0.840
3.8
7.5
14.7
21.7
28.8
35.4
41.8
48.1
54.0
59.9
65.5
3.060
3.047
3.004
2.932
2.896
2.815
2.735
2.651
2.575
2.482
2.396
175.4
170.9
162.1
153.4
145.3
137.1
129.2
121.5
114.0
106.5
99.5
0.000
0.002
0.003
0.004
0.006
0.007
0.007
0.008
0.008
0.008
0.008
ANGLE
(deg)
86.9
86.1
82.7
79.7
77.8
76.7
76.3
76.7
79.7
82.2
88.0
S
22
MAGNITUDE
(ratio)
0.985
0.983
0.980
0.976
0.972
0.967
0.961
0.955
0.948
0.941
0.935
ANGLE
(deg)
2.1
4.2
8.3
12.1
16.2
20.0
23.7
27.3
30.9
34.4
37.9
Table 2
Noise data: V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 12 mA
f
(MHz)
F
min
(dB)
opt
(ratio)
(deg)
800
1.5
0.674
39.7
R
n
(
)
37.15
1997 Dec 02
9
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