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CFY30 查看數據表(PDF) - Infineon Technologies
零件编号
产品描述 (功能)
生产厂家
CFY30
GaAs FET
Infineon Technologies
CFY30 Datasheet PDF : 8 Pages
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GaAs Components
CFY 30
Electrical Characteristics
T
A
= 25
°
C, unless otherwise specified
Characteristics
Symbol
Limit Values
min. typ. max.
Drain-source saturation
I
DSS
current
20 50 80
Pinch-off voltage
V
GS(P)
–
0.5
–
1.3
–
4.0
Transconductance
g
m
20 30
–
Gate leakage current
I
G
–
0.1 2
Noise figure
NF
f
= 4 GHz
f
= 6 GHz
Associated gain
G
A
f
= 4 GHz
f
= 6 GHz
Maximum available gain MAG
–
1.4 1.6
–
2.0
–
10 11.5
–
–
8.9
–
–
11.2
–
Maximum stable gain MSG
–
14.4
–
Power output at 1 dB
P
–
1 dB
–
compression
16
–
Unit
mA
V
mS
µ
A
dB
dB
dB
dB
dBm
Test
Conditions
V
DS
= 3.5 V
V
GS
= 0 V
V
DS
= 3.5 V
I
D
= 1 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
f
= 6 GHz
V
DS
= 3.5 V
I
D
= 15 mA
f
= 4 GHz
V
DS
= 4 V
I
D
= 30 mA
f
= 6 GHz
Data Sheet
2
2001-01-01
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