Characteristics
Emitter
Forward Voltage
Breakdown Voltage
Reverse Current
Capacitance
Thermal Resistance Junction to Lead
Detector
Capacitance
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
DC Forward Current Gain
Saturated DC Forward Current Gain
Thermal Resistance Junction to Lead
Package Transfer Characteristics
IL1
Saturated Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Base)
IL2
Saturated Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
IL5
Saturated Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
(Collector-Emitter)
Current Transfer Ratio
Isolation and Insulation
Common Mode Rejection Output High
Common Mode Rejection Output Low
Common Mode Coupling Capacitance
Package Capacitance
Insulation Resistance
Symbol
Min
Typ
Max Unit Condition
VF
VBR
IR
CO
RTHJL
CCE
C CB
CEB
ICEO
VCESAT
V BE
HFE
HFE SAT
RTHJL
—
1.25 1.65 V
IF=60 mA
6.0
30
—
IR=10 µA
—
0.01 10
µA
VR=6.0 V
—
40
—
pF
VR=0 V, f=1.0 MHz
—
750
—
K/W —
—
6.8
—
pF
VCE=5.0 V, f=1.0 MHz
8.5
VCB=5.0 V, f=1.0 MHz
11
VEB=5.0 V, f=1.0 MHz
—
5.0
50
nA
VCE=10 V
—
0.25 —
V
ICE=1.0 mA, IB=20 µA
—
0.65 —
V
VCE=10 V, IB=20 µA
200
650
1800 —
VCE=10 V, IB=20 µA
120
400
600
—
VCE=0.4 V, IB=20 µA
—
500
—
K/W —
CTRCESAT —
CTR CE
20
CTR CB
—
75
—
%
80
300
0.25 —
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
IF=10 mA, VCB=9.3 V
CTRCESAT —
170
—
%
CTR CE
100
200
500
CTR CB
—
0.25 —
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
IF=10 mA, VCB=9.3 V
CTRCESAT —
CTR CE
50
CTR CB
—
100
—
%
130
400
0.25 —
IF=10 mA, VCE=0.4 V
IF=10 mA, VCE=10 V
IF=10 mA, VCB=9.3 V
CMH
CML
CCM
CI-O
RS
—
5000 —
V/µs
VCM=50 VP-P, RL=1 kΩ, IF=10 mA
—
—
—
0.01 —
pF
—
—
0.6
—
—
1014
—
Ω
VI-O=0 V, f=1.0 MHz
VI-O=500 V
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–86
IL1/2/5
March 17. 2000-13