NTD4808N, NVD4808N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJC−TAB
RqJA
RqJA
Value
2.75
3.5
57
107
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
30
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS = VDS, ID = 250 mA
1.5
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = 10 to 11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
CISS
COSS
CRSS
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1 MHz, VDS = 12 V
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 11.5 V, VDS = 15 V;
ID = 30 A
Turn−On Delay Time
td(ON)
Rise Time
Turn−Off Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
Fall Time
tf
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Typ
Max
Unit
V
27
mV/°C
1
mA
10
±100
nA
2.5
V
5.6
mV/°C
6.7
8.0
6.6
mW
10.3 12.4
9.8
11.4
S
1538
334
pF
180
11.3
13
1.6
nC
4.9
4.9
26
nC
12.3
21.3
ns
14.6
6.0
http://onsemi.com
2