SSF2307B
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-3A
VGS=-2.5V, ID=-2A
VDS=-5V,ID=-3A
-0.5
-1
V
65
90
mΩ
90 115
7
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
1160
PF
Coss
VDS=-10V,VGS=0V,
F=1.0MHz
210
PF
Crss
125
PF
SWITCHING CHARACTERISTICS (Note 4)
Turn-on Delay Time
t d(on)
13.6 27.2
nS
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
tr
td(off)
tf
VDD=-10V,ID=-3A
VGS=-4.5V,RGEN=3Ω
8.6 17.2
nS
73.6 147.2
nS
34.6 69.2
nS
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
VDS=-10V,ID=-3A,VGS=-4.5V
9.6 12.7
nC
1.1
nC
2.6
nC
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=-1A
-1.2
V
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2
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