MB84VA2107 查看數據表（PDF） - Fujitsu

零件编号

产品描述 (功能)

生产厂家

MB84VA2107

16M (×16) FLASH MEMORY & 1M (× 8) STATIC RAM

Fujitsu 

MB84VA2106-10/MB84VA2107-10

• Erase/Program Operations (Flash)

Parameter Symbols

JEDEC Standard

Description

tAVAV

tWC Write Cycle Time

tAVWL

tAS Address Setup Time (WE to Addr.)

tAVEL

tAS Address Setup Time (CEf to Addr.)

tWLAX

tAH Address Hold Time (WE to Addr.)

tELAX

tAH Address Hold Time (CEf to Addr.)

tDVWH

tDS

Data Setup Time

tWHDX

tDH

Data Hold Time

—

tOES Output Enable Setup Time

Read

—

tOEH Output Enable Hold Time

Toggle and Data Polling

tGHEL

tGHEL Read Recover Time Before Write (OE to CEf)

tGHWL

tGHWL Read Recover Time Before Write (OE to WE)

tWLEL

tWS WE Setup Time (CEf to WE)

tELWL

tCS CEf Setup Time (WE to CEf)

tEHWH

tWH WE Hold Time (CEf to WE)

tWHEH

tCH CEf Hold Time (WE to CEf)

tWLWH

tWP Write Pulse Width

tELEH

tCP

CEf Pulse Width

tWHWL

tWPH Write Pulse Width High

tEHEL

tCPH CEf Pulse Width High

tWHWH1

tWHWH1 Programming Operation

tWHWH2

tWHWH2 Sector Erase Operation (Note 1)

—

tVCS

VCCf Setup Time

—

tVLHT Voltage Transition Time (Note 2)

—

tVIDR Rise Time to VID (Note 2)

—

tRB Recover Time from RY/BY

—

tRP RESET Pulse Width

—

tRH RESET Hold Time Before Read

—

tEOE Delay Time from Embedded Output Enable

—

tBUSY Program/Erase Valid to RY/BY Delay

Note : 1. This does not include the preprogramming time.

2. This timing is for Sector Protection Operation.

Min.

100

0

0

50

50

50

0

0

0

10

0

0

0

0

0

0

50

50

30

30

—

—

—

50

4

500

0

500

200

—

—

-10

Typ.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

16

1

—

—

—

—

—

—

—

—

—

Unit

Max.

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— ns

— µs

— sec

15 sec

— µs

— µs

— ns

— ns

— ns

— ns

100 ns

90 ns

15

Share Link: