1N60A
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS = 0.8A,
Continuous Drain-Source Current
ISD
Pulsed Drain-Source Current
ISM
Reverse Recovery Time
Reverse Recovery Charge
tRR VGS=0V, IS = 0.8A
QRR di/dt = 100A/µs
Note: 1. Repeativity rating: pulse width limited by junction temperature
2. L=92mH, IAS=1.0A, VDD=50V, RG=0Ω, Starting TJ=25℃
3. ISD≤1.0A, di/dt≤100A/µs, VDD≤BVDSS, Starting TJ=25℃
4. Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
5. Essentially independent of operating temperature.
Power MOSFET
MIN TYP MAX UNIT
1.6 V
1.2 A
4.8 A
136
ns
0.3
µC
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QW-R502-091,B