SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@IC= 3A
·Fast Switching Speed
APPLICATIONS
·Designed for switching regulator, DC-DC converter and high
frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
3.5
A
60
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SC3158
SPTECH website:www.superic-tech.com
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