BC549B 查看數據表（PDF） - Motorola => Freescale

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BC549B

Low Noise Transistors

Motorola => Freescale 

BC549B,C BC550B,C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

ON CHARACTERISTICS

DC Current Gain

(IC = 10 µAdc, VCE = 5.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

BC549B/550B

BC549C/550C

BC549B/550B

BC549C/550C

hFE

100

150

—

100

270

—

200

290

450

420

500

800

Collector – Emitter Saturation Voltage

(IC = 10 mAdc, IB = 0.5 mAdc)

(IC = 10 mAdc, IB = see note 1)

(IC = 100 mAdc, IB = 5.0 mAdc, see note 2)

Base–Emitter Saturation Voltage

(IC = 100 mAdc, IB = 5.0 mAdc)

Base–Emitter On Voltage

(IC = 10 µAdc, VCE = 5.0 Vdc)

(IC = 100 µAdc, VCE = 5.0 Vdc)

(IC = 2.0 mAdc, VCE = 5.0 Vdc)

SMALL–SIGNAL CHARACTERISTICS

VCE(sat)

—

—

—

VBE(sat)

—

0.075

0.25

0.3

0.6

0.25

0.6

1.1

—

VBE(on)

—

0.52

—

—

0.55

—

0.55

0.62

0.7

Current – Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

Collector–Base Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Small–Signal Current Gain

(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)

BC549B/BC550B

BC549C/BC550C

fT

—

250

—

Ccbo

—

2.5

—

hfe

240

330

500

450

600

900

Noise Figure

(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz)

(IC = 200 µAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)

NOTES:

1. IB is value for which IC = 11 mA at VCE = 1.0 V.

2. Pulse test = 300 µs – Duty cycle = 2%.

NF1

—

0.6

2.5

NF2

—

—

10

Unit

—

Vdc

Vdc

Vdc

MHz

pF

—

dB

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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