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MJE5740G(2015) 查看數據表(PDF) - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MJE5740G
(Rev.:2015)
NPN Silicon Power Darlington Transistors
ON Semiconductor
MJE5740G Datasheet PDF : 6 Pages
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MJE5740, MJE5742
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
RESISTIVE
SWITCHING
P
W
DUTY CYCLE
≤
10%
68
t
r
, t
f
≤
10 ns
+ 5 V
1N493
33
3
0.001
m
F
33 1N493
3
2N222
1
2
k
1
+ 5 Vk
MJE21
0
R
B
I
B
V
CC
L
I
C
1N493
NOTE:
3
0.02
m
F
270
PW and V
CC
Adjusted for Desired I
C
R
B
Adjusted for Desired I
B1
1
k
2N2905
47
100
1/2
W
T.U.T.
MJE20
0
- V
BE(off)
MR826
*
V
clamp
*SELECTED FOR
≥
1 kV
5.1
k
V
CE
51
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
GAP FOR 200
m
H/20 A
L
coil
= 200
m
H
V
CC
= 30 V
V
CE(pk)
= 250 Vdc
I
C(pk)
= 6 A
OUTPUT WAVEFORMS
I
C
I
C(pk)
t
f
CLAMPED
t
t
1
t
f
V
CE
V
CE
OR
V
clamp
t
TIM
t
2
E
t
1
ADJUSTED TO
OBTAIN I
C
t
1
≈
L
coil
(I
C
pk
)
V
CC
t
2
≈
L
coil
(I
C
pk
)
V
clamp
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
+V
CC
R
C
TUT
R
B
SCOPE
D
1
- 4 V
V
CC
= 250 V
D1 = 1N5820 OR EQUIV.
+10 V
25
m
s
0
- 9.2 V
t
r
, t
f
< 10 ns
DUTY CYCLE = 1%
R
B
AND R
C
ADJUSTED
FOR DESIRED I
B
AND I
C
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