Philips Semiconductors
Self Tuned Radio (STR)
Product specification
TEA5757HL; TEA5759HL
AM CHARACTERISTICS
Input frequency fi = 1 MHz; m = 0.3; fm = 1 kHz; measured in test circuit at pin 11 (see Fig.11); S2 in position B;
Vi1 measured at input of matching network at pin 2; matching network adjusted to maximum output voltage at low input
level; Vi(n) refers to test circuit (see Fig.11); Vn refers to pin voltages; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V11
Vi1
Vil
PSRR
AF output voltage
Vi1 = 5 mV
36
45
70
mV
Vi2 = 0.2 mV
12
30
45
mV
RF sensitivity input voltage
(S+N)/N = 26 dB
40
55
70
µV
large signal voltage handling capacity m = 0.8; THD ≤ 8%
150 300 −
mV
power supply ripple rejection
∆-V----V-1--1-8-
∆V8 = 100 mV (RMS);
100 Hz; V8 = 3.0 V
−
−47 −
dB
Ii
Ci
Gc
(S+N)/N
THD
α450
I22
I14
input current (pin 2)
input capacitance (pin 2)
front-end conversion gain
signal plus noise-to-noise ratio
total harmonic distortion
IF suppression
indicator current
muting current
V48 = 0.2 V
−
0
−
µA
V48 = 0.2 V
−
−
4
pF
V48 = 0.2 V
5
10
14
dB
V48 = 0.9 V
−26 −14 0
dB
−
50
−
dB
Vi2 = 0.32 mV
−
32
−
dB
Vi1 = 1 mV
−
0.8 2.0 %
V11 = 30 mV
−
56
−
dB
Vi2 = 0 V; V22 = 0 V
−60 −50 −40 µA
Vi2 = 100 mV; V22 = 0 V −330 −285 −240 µA
S4 in position B;
12
16
20
µA
V14 = 1.4 V; Vi2 = 100 mV
2000 Feb 02
15