FDS4435A 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FDS4435A Datasheet PDF : 5 Pages
| |||
Typical Characteristics (continued)
10
ID = -8.8A
8
6
VDS = -5V
-15V
-10V
4
2
0
0
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics
100
RDS(ON) LIMIT
10
1
VGS = -10V
0.1
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.1
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
2500
2000
1500
CISS
f = 1 MHz
VGS = 0 V
1000
500
0
0
COSS
CRSS
5
10
15
20
25
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
50
40
30
20
10
0
0.001
SINGLE PULSE
RθJA =125°C/W
TA = 25°C
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100 300
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.5
0.2
0.1
0. 0 5
0. 0 2
0. 0 1
0 .0 0 5
D = 0.5
0.2
0.1
0 0. 5
00. 2
0. 0 1
S i n g le P ul se
0 .0 0 2
0 .0 0 1
0 . 00 0 1
0 .0 0 1
0.01
0.1
1
t 1, TIM E (s e c )
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
P(pk )
t1 t 2
TJ - TA = P * RθJA ( t)
D u t y C y c l e, D = t 1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS4435A Rev. D
Share Link: 