MBM29PL3200BE70PFV 查看數據表（PDF） - Fujitsu

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MBM29PL3200BE70PFV

PAGE MODE FLASH MEMORY CMOS 32 M (2 M × 16/1 M × 32) BIT

Fujitsu 

MBM29PL3200TE/BE70/90

s PIN DESCRIPTIONS

Pin Name

Table 1 MBM29PL3200TE/BE Pin Configuration

Function

A19 to A0, A-1

Address Input

DQ31 to DQ0

Data Input/Output

CE

Chip Enable

OE

Output Enable

WE

Write Enable

DW/W

Selects 32-bit or 16-bit mode

WP

Hardware Write Protection

ACC

Program Acceleration

N.C.

Pin Not Connected Internally

VSS

Device Ground

VCC

Device Power Supply

s BLOCK DIAGRAM

VCC

VSS

Erase Voltage

Generator

DQ31 to DQ0

Input/Output

Buffers

WE

DW/W

WP

ACC

CE

OE

State

Control

Circuit

(Command

Register)

Program Voltage

Generator

Chip Enable

Output Enable

Logic

STB

Data Latch

A19 to A29

A1, A0

(A−1)

Y-Decoder

STB

Low VCC Detector

Timer for

Program/Erase

Address

Latch X-Decoder

Y-Gating

33,554,432

Cell Matrix

6

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