MJE702(2002) 查看數據表（PDF） - ON Semiconductor

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MJE702
(Rev.:2002)

Plastic Darlington Complementary Silicon Power Transistors

ON Semiconductor 

MJE700 MJE702 MJE703 MJE800 MJE802 MJE803

PNP

MJE700 Series

6.0 k

4.0 k

TJ = 125°C

3.0 k

25°C

2.0 k

VCE = 3.0 V

NPN

MJE800 Series

6.0 k

4.0 k

TJ = 125°C

3.0 k

2.0 k

25°C

VCE = 3.0 V

-ā55°C

1.0 k

800

600

-ā55°C

1.0 k

800

600

400

300

0.04 0.06 0.1

0.2

0.4 0.6 1.0

2.0

4.0

IC, COLLECTOR CURRENT (AMP)

400

300

0.04 0.06 0.1

0.2

0.4 0.6 1.0

2.0

4.0

IC, COLLECTOR CURRENT (AMP)

Figure 7. DC Current Gain

3.4

3.0

IC = 1.0 A

2.0 A

2.6 0.5 A

TJ = 25°C

4.0 A

3.4

3.0

IC =

0.5 A

1.0 A 2.0 A

4.0 A

2.6

TJ = 25°C

2.2

2.2

1.8

1.8

1.4

1.4

1.0

0.6

0.1 0.2

1.0

0.5 1.0 2.0 5.0 10 20

50 100

0.6

0.1 0.2

0.5 1.0 2.0

5.0 10 20

IB, BASE CURRENT (mA)

IB, BASE CURRENT (mA)

Figure 8. Collector Saturation Region

50 100

2.2

TJ = 25°C

1.8

1.4 VBE(sat) @ IC/IB = 250

1.0

VCE(sat) @ IC/IB = 250

0.6

VBE @ VCE = 3.0 V

2.2

TJ = 25°C

1.8

1.4 VBE(sat) @ IC/IB = 250

1.0

VCE(sat) @ IC/IB = 250

0.6

VBE @ VCE = 3.0 V

0.2

0.04 0.06 0.1

0.2

0.4 0.6 1.0 2.0

4.0

0.2

0.04 0.06 0.1

0.2

0.4 0.6 1.0

2.0

4.0

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)

Figure 9. “On” Voltages

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