2SA1606 查看數據表（PDF） - SANYO -> Panasonic

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产品描述 (功能)

生产厂家

2SA1606

PNP/NPN Epitaxial Planar Silicon Transistors

SANYO -> Panasonic 

Continued from preceding page.

Parameter

Collector-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Votage

Turn-ON Time

Fall Time

Storage Time

Switching Time Test Circuit

2SA1606/2SC4159

Symbol

Conditions

VCE(sat) IC=(–)500mA, IB=(–)50mA

V(BR)CBO

V(BR)CEO

V(BR)EBO

ton

tf

tstg

IC=(–)1mA, IE=0

IC=(–)1mA, RBE=∞

IE=(–)1mA, IC=0

See specified test circuit.

See specified test circuit.

See specified test circuit.

See specified test circuit.

See specified test circuit.

See specified test circuit.

Ratings

Unit

min typ max

(–0.5)

V

0.3

V

(–)180

V

(–)160

V

(–)6

V

(0.29)

µs

0.15

µs

(0.19)

µs

0.48

µs

(0.48)

µs

0.81

µs

10IB1=–10IB2=IC=0.5A

PW=20µs

For PNP, the polarity is reversed.

Unit (resistance : Ω, capacitance : F)

No.2535-2/4

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