MJ11022G 查看數據表（PDF） - ON Semiconductor

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MJ11022G

Complementary Darlington Silicon Power Transistors

ON Semiconductor 

MJ11021(PNP) MJ11022 (NPN)

1.0

0.7

0.5 D = 0.5

0.3

0.2

0.2

0.1

0.1

0.05

0.07

0.02

0.05

0.03

0.01

0.02 SINGLE PULSE

0.01

0.01 0.02 0.03 0.05 1.0

0.2 0.3 0.5 1.0

RqJC(t) = r(t) RqJC

RqJC(t) = 0.86°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000

t, TIME (ms)

Figure 3. Thermal Response

5.0 ms 1.0 ms 0.5 ms

30

0.1 ms

20

10

dc

5.0

3.0

2.0

TJ = 175°C

SECOND BREAKDOWN LIMIT

1.0

BONDING WIRE LIMIT

0.5

THERMAL LIMITATION @ TC = 25°C

0.3

SINGLE PULSE

0.2

0

3.0 5.0 7.0 10

20 30 50 70 100 150200

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 4. Maximum Rated Forward Bias Safe

Operating Area (FBSOA)

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 4 is based on TJ(pk) = 175_C, TC is

variable dependIng on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 175_C. TJ(pk) may be calculated from the data in

Figure 3. At high case temperatures thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

30

L = 200 mH

IC/IB1 ≥ 50

TC = 25°C

20

VBE(off) 0 − 5.0 V

RBE = 47 W

DUTY CYLE = 10%

10

0

0 20

60 100 140 180 220 260

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 5. Maximum RBSOA, Reverse Bias Safe

Operating Area

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn−off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be hold to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage−current conditions during

reverse biased turn−off. This rating is verified under

clamped conditions so that the device is never subjected to

an avalanche mode. Figure 5 gives ROSOA characteristics.

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