TS925 查看數據表（PDF） - STMicroelectronics
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TS925 Datasheet PDF : 17 Pages
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Electrical Characteristics
TS925
Table 6.
Symbol
Electrical characteristics for VCC = 5V, VDD = 0V, Vicm = VCC/2, RL connected
to VCC/2, Tamb = 25°C (unless otherwise specified)
Parameter
Conditions
Min. Typ. Max. Unit
Vio Input Offset Voltage
at Tamb = +25°C:
TS925
TS925A
at Tmin. ≤ Tamb ≤ Tmax:
TS925
TS925A
3
0.9
mV
5
1.8
DVio Input Offset Voltage Drift
2
µV/°C
Iio Input Offset Current
Vout = 2.5V
1
30
nA
Iib Input Bias Current
Vout = 2.5V
15 100
nA
VOH High Level Output Voltage
RL= 10kΩ
4.90
RL = 600Ω
4.85
V
RL = 32Ω
4.4
VOL Low Level Output Voltage
RL= 10kΩ
RL = 600Ω
RL = 32Ω
50
120
mV
300
Avd Large Signal Voltage Gain
Vout = 2Vpk-pk
RL= 10k
RL = 600Ω
RL = 32Ω
200
V/mV
40
17
GBP Gain Bandwidth Product
RL = 600Ω
4
MHz
CMR Common Mode Rejection Ratio
60 80
dB
SVR Supply Voltage Rejection Ratio Vcc = 3 to 5V
60 85
dB
Io Output Short-Circuit Current
50 80
mA
SR Slew Rate
0.7 1.3
V/µs
Pm Phase Margin at Unit Gain
RL = 600Ω, CL =100pF
68
Degrees
GM Gain Margin
RL = 600Ω, CL =100pF
12
dB
en Equivalent Input Noise Voltage f = 1kHz
9
---n---V-----
Hz
THD Total Harmonic Distortion
Vout = 2Vpk-pk, f = 1kHz,
Av = 1, RL = 600Ω
0.01
%
Cs Channel Separation
120
dB
6/17
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