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ADM1022ARQ 查看數據表(PDF) - Analog Devices

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ADM1022ARQ Datasheet PDF : 19 Pages
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1
SCL
9
1
ADM1022
9
SDA
0
START BY
MASTER
1
0
1
1
A1
A0 R/W
D7
FRAME 1
SERIAL BUS ADDRESS BYTE
ACK. BY
ADM1022
D6 D5 D4 D3 D2 D1 D0
FRAME 2
ADDRESS POINTER REGISTER BYTE
ACK. BY
ADM1022
1
9
SCL (CONTINUED)
SDA (CONTINUED)
D7 D6 D5 D4 D3 D2 D1 D0
FRAME 3
DATA BYTE
ACK. BY STOP BY
ADM1022 MASTER
Figure 11a. Writing a Register Address to the Address Pointer Register, then Writing Data to the Selected Register
1
9
1
9
SCL
SDA
0
START BY
MASTER
1
0
1
1
A1
A0 R/W
D7
ACK. BY
ADM1022
FRAME 1
SERIAL BUS ADDRESS BYTE
D6 D5 D4 D3 D2 D1 D0
ACK. BY
ADM1022
FRAME 2
ADDRESS POINTER REGISTER BYTE
STOP BY
MASTER
Figure 11b. Writing to the Address Pointer Register Only
1
9
1
9
SCL
SDA
0
START BY
MASTER
1
0
1
1
A1
A0 R/W
D7 D6 D5 D4 D3 D2 D1
ACK. BY
ADM1022
FRAME 1
SERIAL BUS ADDRESS BYTE
FRAME 2
DATA BYTE FROM ADM1022
Figure 11c. Reading Data from a Previously Selected Register
D0
NO ACK. STOP BY
BY MASTER MASTER
TEMPERATURE MEASUREMENT SYSTEM
Internal Temperature Measurement
The ADM1022 contains an on-chip bandgap temperature sen-
sor. The on-chip ADC performs conversions on the output of
this sensor and outputs the temperature data in 8-bit twos comple-
ment format. The format of the temperature data is shown in
Table II.
External Temperature Measurement
The ADM1022 can measure the temperature of two external
diode sensors or diode-connected transistors, connected to Pins
9 and 10 or 11 and 12.
Pins 9 and 10 are a dedicated temperature input channel. The
default function of Pins 11 and 12 is the THERM input/output
and a general purpose logic input (GPI), but they can be config-
ured to measure a diode sensor by setting Bit 7 of the Configu-
ration Register to 1.
The forward voltage of a diode or diode-connected transistor,
operated at a constant current, exhibits a negative temperature
coefficient of about –2 mV/°C. Unfortunately, the absolute value
of VBE, varies from device to device, and individual calibra-
tion is required to null this out, so the technique is unsuitable
for mass-production.
The technique used in the ADM1022 is to measure the change
in VBE when the device is operated at two different currents.
This is given by:
where:
VBE = KT/q × ln(N)
K is Boltzmann’s constant
q is charge on the carrier
T is absolute temperature in Kelvins
N is ratio of the two currents
Figure 12 shows the input signal conditioning used to mea-
sure the output of an external temperature sensor. This figure
shows the external sensor as a substrate transistor, provided
for temperature monitoring on some microprocessors, but it
could equally well be a discrete transistor.
REV. 0
–9–

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