8.0
6.0
Q4
Q3
4.0
Q2
Q1
2.0
0
–40 –20
0
20 40
60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
24
VPK = 400 V
TJ = 110°C
22
20
500 V
18
16
100 200
600 V
300 400 500 600 700 800
RGK, GATE–MT1 RESISTANCE (OHMS)
900 1000
Figure 9. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(+)
30
W RG–MT1 = 510
VPK = 400 V
25
20
500 V
600 V
15
10
100
105
110
115
120
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
MAC6071A,B MAC6073A,B MAC6075A,B
0.9
0.8
0.7
0.6
Q3
Q1 Q2
Q4
0.5
0.4
0.3
–40 –20
0
20 40
60 80
TJ, JUNCTION TEMPERATURE (°C)
100 110
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
30
W RG–MT1 = 510
TJ = 100°C
25
20
110°C
15
120°C
10
400
450
500
550
600
VPK, PEAK VOLTAGE (VOLTS)
Figure 10. Typical Exponential Static dv/dt
versus Peak Voltage, MT2(+)
11
TJ = 110°C
VPK = 400 V
10.5
10
500 V
9.5
600 V
9.0
100 200
300 400 500 600 700 800
RGK, GATE–MT1 RESISTANCE (OHMS)
900 1000
Figure 12. Typical Exponential Static dv/dt
versus Gate–MT1 Resistance, MT2(–)
Motorola Thyristor Device Data
5