NTE56 查看數據表（PDF） - NTE Electronics

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NTE56

Silicon NPN Transistor High Gain Switch and Pass Regulator

NTE Electronics 

NTE56

Silicon NPN Transistor

High Gain Switch and Pass Regulator

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V

Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V

Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A

Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W

Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Electrical Characteristics: (TC = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Collector Cutoff Current

Emitter Cutoff Current

ICBO

IEBO

VCB = 100V

VEB = 6V

Collector–Emitter Breakdown Voltage V(BR)CEO IC = 25mA

DC Current Gain

hFE VCE = 4V, IC = 0.5A

Collector–Emitter Saturation Voltage VCE(sat) IC = 2A, IB = 50mA

Current Gain–Bandwidth Product

fT

VCE = 12V, IE = –0.2A

Min Typ Max Unit

– – 10 µA

– – 100 µA

80 – – V

500 – –

– – 0.5 V

– 15 – MHz

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