DAN217(2011) 查看數據表（PDF） - ROHM Semiconductor

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DAN217
(Rev.:2011)

Switching Diode

ROHM Semiconductor 

Data Sheet

Switching Diode

DAN217

Applications

Ultra high speed switching

Dimensions (Unit : mm)

Land size figure (Unit : mm)

1.9

Features

1) Small mold type. (SMD3)

2) High reliability.

Construction

Silicon epitaxial planar

2.9±0.2

各リードとも

0.4 ＋0.1 Eac同h寸le法ad has same dimension

　－0.05

(3)

＋0.1

0.15－0.06

(2)

(1)

0.95

0.95

1.9±0.2

0～0.1

0.8±0.1

1.1±0.2

0.01

ROHM : SMD3

JEDEC :S0T-346

JEITA : SC-59

weekcode

Taping specifications (Unit : mm)

4.0±0.1

2.0±0.05

φ1.5±0.1

　　　　　 0

0.95

0.8MIN.

SMD3

Structure

0.3±0.1

3.2±0.1

4.0±0.1

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Reverse voltage (repetitive peak) VRM

Reverse voltage (DC)

VR

Forward current (Single)

IFM

Average rectified forward current (Single)

Io

Surge current (t=1us)

Power dissipation

Isurge

Pd

Junction temperature

Tj

Storage temperature

Tstg

Limits

80

80

300

100

4

200

150

55 to 150

φ1.05MIN

Unit

V

V

mA

mA

A

mW

°C

°C

1.35±0.1

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

Forward voltage

VF

-

Reverse current

IR

-

Capacitance between terminals

Ct

-

-

1.2

-

0.1

-

3.5

Reverse recovery time

trr

-

-

4

Unit

Conditions

V

IF=100mA

μA

VR=70V

pF

VR=6V , f=1MHz

ns

VR=6V , IF=5mA , RL=50Ω

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© 2011 ROHM Co., Ltd. All rights reserved.

1/2

2011.06 - Rev.B

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