UPA836TF 查看數據表（PDF） - NEC => Renesas Technology

零件编号

产品描述 (功能)

生产厂家

UPA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NEC => Renesas Technology 

PRELIMINARY DATA SHEET

Silicon Transistor

µPA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)

IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION

The µPA836TF has two different built-in transistors (Q1

and Q2) for low noise amplification in the VHF band to UHF

band.

FEATURES

• Low noise

Q1 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA

Q2 : NF = 1.7 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA

• High gain

Q1 : |S21e|2 = 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA

Q2 : |S21e|2 = 3.5 dB TYP. @f = 2 GHz, VCE = 1 V, IC = 3 mA

• 6-pin thin-type small mini mold package

• 2 different transistors on-chip (2SC5193, 2SC4959)

ON-CHIP TRANSISTORS

3-pin small mini mold part No.

Q1

2SC4959

Q2

2SC5193

The µPA833TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

PART NUMBER

µPA836TF

µPA836TF-T1

QUANTITY

PACKING STYLE

Loose products

(50 pcs)

Taping products

(3 kpcs/reel)

8-mm wide embossed tape.

Pin 6 (Q1 Base), pin 5 (Q2

Emitter), and pin 4 (Q2 Base)

face perforated side of tape.

PACKAGE DRAWINGS (Unit:mm)

2.10±0.1

1.25±0.1

PIN CONFIGURATION (Top View)

B1 E2 B2

6

54

Q1

Q2

1

2

3

C1 E1 C2

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

Caution is required concerning excess input, such as fromcstealetictricity, because the high-frequency

process is used for this device.

The information in this document is subject to change without notice.

Document No. P12728EJ1V0DS00 (1st edition)

Date Published August 1997 N

Printed in Japan

©

1997

Share Link: