HAL573SF-K 查看數據表（PDF） - Micronas
零件编号
产品描述 (功能)
生产厂家
HAL573SF-K Datasheet PDF : 36 Pages
| |||
DATA SHEET
HAL57x, HAL58x
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.75 V to 24 V
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No. Min.
Typ.
Max.
Unit
IDDlow
Low Current Consumption
1
over Temperature Range
5
6
4.5
6
6.9
mA
6.9
mA
IDDhigh
High Current Consumption
1
over Temperature Range
VDDZ
Overvoltage Protection
1
at Supply
12
14.3
17
mA
−
28.5
32
V
fosc
Internal Oscillator Chopper
−
−
145
−
kHz
Frequency over Temperature
Range
ten(O)
Enable Time of Output after
1
−
30
−
µs
Setting of VDD
tr
Output Rise Time
1
−
0.4
1.6
µs
tf
Output Fall Time
1
−
0.4
1.6
µs
SOT89B Package
Rthja
Rthjc
Rthjs
Thermal Resistance
Junction to Ambient
Junction to Case
Junction to Solder Point
TO92UA Package
−
−
−
2092)
K/W
−
−
−
562)
K/W
−
−
−
823)
K/W
Rthja
Rthjc
Rthjs
Thermal Resistance
Junction to Ambient
Junction to Case
Junction to Solder Point
−
−
−
2462)
K/W
−
−
−
702)
K/W
−
−
−
1273)
K/W
1)
2)
B > BON + 2 mT or B < BOFF − 2 mT for HAL57x, B > BOFF + 2 mT or B < BON − 2 mT for HAL58x
Measured with a 1s0p board
3) Measured with a 1s1p board
Test Conditions
for HAL579 only
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
1)
VDD = 12 V, Rs = 30 Ω
VDD = 12 V, Rs = 30 Ω
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
1.80
1.05
1.45
2.90
0.50
1.50
1.05
Fig. 3–6: Recommend pad size SOT89B-1
Dimensions in mm
Micronas
Dec. 22, 2008; DSH000145_003EN
15
Share Link: 