Philips Semiconductors
UHF wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IC(AV)
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
average collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
Ts = 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction
to soldering point
CONDITIONS
Ptot = 180 mW; Ts = 90 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
Preliminary specification
PRF949
MIN.
−
−
−
−
−
−
−65
−
MAX.
20
10
1.5
50
50
250
+150
175
UNIT
V
V
V
mA
mA
mW
°C
°C
VALUE
335
UNIT
K/W
1999 Oct 29
3