PRF949 查看數據表（PDF） - Philips Electronics
零件编号
产品描述 (功能)
生产厂家
PRF949 Datasheet PDF : 7 Pages
| |||
Philips Semiconductors
UHF wideband transistor
Preliminary specification
PRF949
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
DC characteristics
V(BR)CBO
V(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
IC = 100 µA; IE = 0
IC = 100 µA; IB = 0
20
−
−
V
10
−
−
V
V(BR)EBO
VBEF
ICBO
IEBO
hFE
emitter-base breakdown voltage
forward base-emitter voltage
collector-base leakage current
emitter-base leakage current
DC current gain
IE = 10 µA; IC = 0
IE = 25 mA
VCB = 10 V; IE = 0
VEB = 1 V; IC = 0
IC = 5 mA; VCE = 6 V
IC = 15 mA; VCE = 6 V
1.5 −
−
V
−
−
1.05 V
−
−
100 nA
−
−
100 nA
100 150 200
−
150 −
AC characteristics
Cre
fT
|s21|2
GUM
NF
feedback capacitance
transition frequency
insertion gain
maximum unilateral power gain;
note 1
noise figure
IC = 0; VCB = 6 V; f = 1 MHz
−
IC = 15 mA; VCE = 6 V; fm = 1 GHz 7
IC = 15 mA; VCE = 6 V; f = 1 GHz 13
IC = 15 mA; VCE = 6 V;
−
Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 6 V;
−
Tamb = 25 °C; f = 2 GHz
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
−
f = 1 GHz
0.3 tbf
9
−
15
−
16
−
pF
GHz
dB
dB
10
−
dB
1.5 2.5 dB
ΓS = Γopt; IC = 5 mA; VCE = 6 V;
−
2.1 −
dB
f = 2 GHz
Note
1.
GUM is the maximum unilateral power gain, assuming s12 is zero.
GUM
=
10
log -----------------------s----2--1----2-----------------------
(1 – s11 2)(1 – s22 2)
dB
1999 Oct 29
4
Share Link: 