1PS70SB82 查看數據表（PDF） - Philips Electronics

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1PS70SB82

Schottky barrier (double) diodes

Philips Electronics 

Philips Semiconductors

Schottky barrier (double) diodes

Product specification

1PS70SB82; 1PS70SB84;

1PS70SB85; 1PS70SB86

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

Per diode

VR

continuous reverse voltage

IF

continuous forward current

Tstg

storage temperature

Tj

junction temperature

MIN.

MAX.

UNIT

−

15

V

−

30

mA

−65

+150

°C

−

125

°C

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to (SOT323; SC-70) standard mounting conditions.

VALUE

625

UNIT

K/W

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

rD

differential diode forward resistance

IR

continuous reverse current

Cd

diode capacitance

Note

1. Pulsed test: tp = 300 µs; δ = 0.02.

CONDITIONS

TYP.

see Fig.6

IF = 1 mA

−

IF = 30 mA

−

f = 1 MHz; IF = 5 mA; see Fig.9 12

VR = 1 V; note 1; see Fig.7

−

VR = 0; f = 1 MHz; see Fig.8

1

MAX.

UNIT

340

mV

700

mV

−

Ω

0.2

µA

−

pF

2001 Jan 18

3

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