(Surface-Mount Type) (Electret Condense Microphone)
Characteristics
VGDS (V) IG (mA)
Max
Max
IDSS Rank
(µA)
⎪Yfs⎪(mS) Ciss (pF)
Min
Typ.
VESM
1.2
0.5
(mm)
High gain
Low THD
Low Noise
Small Ciss
A = 80 to 200
−20
10
0.55
3.6
2SK3582MFV
B = 170 to 300
High gain
Low THD
Small Ciss
A = 140 to 240
−20
10
0.9
3.5
2SK3857MFV
B = 210 to 350
A = 140 to 240
High gain
Small Ciss
AK = 100 to 250
−20
10
B = 210 to 350
1.35
4.0
2SK4059MFV
BK = 210 to 400
C = 320 to 500
Very Low Noise
Very Small Ciss
−20
A = 140 to 240
10
0.65
1.8
TTK101MFV *
B = 210 to 350
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
TESM3
1.4
Package
VESM2
1.2
CST3
0.6
0.395
(mm)
0.3 (max)
0.35
(mm)
0.38
(mm)
2SK3582TK
2SK3582TV
2SK3582CT
2SK3857TK
2SK3857TV
2SK3857CT
2SK4059TK
2SK4059TV
2SK4059CT
TTK101TV *
⎯
⎯
*: New product
Junction FETs (Dual) (Surface-Mount Type)
Classification
VGDS (V)
IG (mA)
IDSS (mA)
⎪Yfs⎪(mS)
Min
SMV
2.9
Package
USV
2.0
♦Internal Connections
Nch x 2
(mm)
Pch x 2
Nch x 2
(mm)
Pch x 2
General-purpose
−50
10
1.2 to 14
4
2SK2145
⎯
2SK3320
⎯
Q1
Q2
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦The internal connection diagrams only show the general configurations of the circuits.
17
2010/9 SCE0004K