General-Purpose Transistors (Dual)
VCEO IC
Classification (V) (mA)
Max Max
CST6
1.0
fS6
1.0
ESV
1.6
Dual Type
USV
2.0
SMV
2.9
(mm)
NPN + PNP
NPN
(mm)
(mm)
PNP
NPN + PNP PNP + NPN
NPN
(mm)
PNP
NPN
(mm)
PNP
PNP + NPN
General
-purpose
Low noise
High current
(HN2B26CT) (HN1C26FS) (HN1A26FS)
2SA1873
150
50
(100)
(▲18) **
(▲10)
(▲7) (HN1B26FS) HN4B01JE 2SC4944
(▲1) 2SC4207 2SA1618
(HN2C26FS) (HN2A26FS)
(▲9)
(▲6)
(▲2) HN4A56JU
(▲2)
(▲1)
(▲12)
(▲11)
(▲4)
30 500
50 500
120 100
12 400
12 500
15 800
25 800
30 800
10 2000
20 2000
HN4C05JU
(▲2)
HN4B04J
(▲3) *
HN4C06J HN4A06J
(▲2)
(▲1) HN4B06J
HN4C51J HN4A51J
(▲3)
(▲5)
(▲4)
HN4C08J HN4A08J
(▲2)
(▲1)
Strobe
10 5000
High breakdown
80 300
voltage
High hFE
50 150
Muting
20 300
High-speed
15 200
switching
High-voltage
200 50
switching
High breakdown 250 50
voltage
300 100
Darlington 40 300
• For the PNP transistors, the minus sign (−) indicating a negative voltage is omitted.
• The ratings enclosed in parenthesis are for those devices whose part numbers are enclosed in parentheses.
• The products shown in bold are also manufactured in offshore fabs.
• Contact the Toshiba sales representative for information about RoHS compliance before you purchase any components.
♦Internal Connections
Number of Pins
▲1
▲2
▲3
▲4
▲5
▲6
5
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
▲7
▲8
▲9
▲10
▲11
▲12
6
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
▲13
▲14
▲15
▲16
▲17
▲18
6
Q1
Q2
Q1
Q1
Q1
Q2
Q2
Q1
Q1
Q2
Q2
Q2
♦The internal connection diagrams only show the general configurations of the circuits.
5
2010/9 SCE0004K