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零件编号
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K5A50D 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
K5A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Toshiba
K5A50D Datasheet PDF : 6 Pages
1
2
3
4
5
6
R
DS (ON)
– Tc
5
COMMON SOURCE
VGS
=
10 V
PULSE TEST
4
3
5
2.5
2
ID
=
1.2 A
1
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
TK5A50D
I
DR
– V
DS
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
1
10,15
0.1
0
5 3
1 VGS
=
0,
−
1 V
−
0.3
−
0.6
−
0.9
−
1.2
−
1.5
DRAIN-SOURCE VOLTAGE V
DS
(V)
10000
CAPACITANCE – V
DS
1000
Ciss
100
Coss
10
COMMON SOURCE
VGS
=
0 V
f
=
1 MHz
Tc
=
25°C
1
0.1
1
Crss
10
100
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
th
– Tc
5
4
3
2
COMMON SOURCE
1
VDS
=
10 V
ID
=
1 mA
PULSE TEST
0
−
80
−
40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
P
D
– Tc
50
40
30
20
10
0
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
500
20
VDS
400
200
16
VDD
=
100 V
300
400
12
200
8
VGS
COMMON SOURCE
ID
=
5 A
100
Tc
=
25°C
4
PULSE TEST
0
0
0
4
8
12
16
20
TOTAL GATE CHARGE Q
g
(nC)
4
2009-09-29
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