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零件编号
产品描述 (功能)
2SK3762 查看數據表(PDF) - Unspecified
零件编号
产品描述 (功能)
生产厂家
2SK3762
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)
Unspecified
2SK3762 Datasheet PDF : 6 Pages
1
2
3
4
5
6
2SK3762
r
th
– t
w
10
1
Duty=0.5
0.2
0.1
0.1
0.01
10
μ
0.01
0.02
0.05
SINGLE PULSE
PDM
t
T
Duty
=
t/T
Rth (ch-c)
=
2.02°C/W
100
μ
1
m
10
m
100
m
1
10
PULSE WIDTH t
w
(s)
SAFE OPERATING AREA
10
ID max ( PULSED)
*
ID max ( CONTINUOUS)
*
100
µ
s
*
1 ms
*
1
DC OPERATION
Tc
=
25°C
0.1
※
SINGLE NONREPETITIVE PULSE
Tc=25
℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE
.
0.01
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE V
DS
(V)
E
A S
– T
ch
25
20
15
10
5
0
25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
15 V
−
15 V
B
VDSS
I
AR
V
DD
V
DS
TEST CIRCUIT
WAVE FORM
R
G
=
25
Ω
V
DD
=
90 V, L
=
6.3 mH
ÅAS
=
1
2
⋅
L
⋅
I2
⋅
BVDSS
BVDSS
−
VDD
5
2004-02-26
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