AD8221ARZ-R7 查看數據表（PDF） - Analog Devices
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AD8221ARZ-R7 Datasheet PDF : 24 Pages
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AD8221
DIE INFORMATION
Die size: 1575 µm × 2230 µm
Die thickness: 381 µm
To minimize gain errors introduced by the bond wires, use Kelvin connections between the chip and the gain resistor, RG, by connecting
Pad 2A and Pad 2B in parallel to one end of RG and Pad 3A and Pad 3B in parallel to the other end of RG. For unity gain applications
where RG is not required, Pad 2A and Pad 2B must be bonded together as well as the Pad 3A and Pad 3B.
1
2A
8
2B
3A
7
3B
6
4
5
LOGO
Figure 53. Bond Pad Diagram
Table 7. Bond Pad Information
Pad No.
1
2A
2B
3A
3B
4
5
6
7
8
Mnemonic
−IN
RG
RG
RG
RG
+IN
−VS
REF
VOUT
+VS
X (µm)
–379
–446
–615
–619
–490
–621
+635
+649
+612
+636
Pad Coordinates1
Y (µm)
+951
+826
+474
+211
–190
–622
–823
–339
+84
+570
1 The pad coordinates indicate the center of each pad, referenced to the center of the die. The die orientation is indicated by the logo, as shown in Figure 53.
Rev. C | Page 22 of 24
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