IKW40N120T2 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

IKW40N120T2

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW40N120T2

TrenchStop® 2nd Generation Series

20.0mJ

*) Eon and Etsinclude losses

due to diode recovery

15.0mJ

10.0mJ

5.0mJ

*) Eon and Ets include losses

due to diode recovery

Ets*

10.0 mJ

Ets*

7.5 mJ

Eon*

Eon*

5.0 mJ

Eoff

Eoff

2.5 mJ

0.0mJ

20A

40A

60A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses as

a function of collector current

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, RG=12Ω,

Dynamic test circuit in Figure E)

0.0 mJ









RG, GATE RESISTOR

Figure 14. Typical switching energy losses as a

function of gate resistor

(inductive load, TJ=175°C, VCE=600V,

VGE=0/15V, IC=40A,

Dynamic test circuit in Figure E)

7.5mJ

*) Eon and Ets include losses

due to diode recovery

*) Eon and Ets include losses

due to diode recovery

Ets*

10.0mJ

5.0mJ

2.5mJ

Eoff

Eon*

7.5mJ

Ets*

5.0mJ

2.5mJ

Eon*

Eoff

0.0mJ

0°C

50°C

100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 15. Typical switching energy losses as

a function of junction temperature

(inductive load, VCE=600V, VGE=0/15V,

IC=40A, RG=12Ω,

Dynamic test circuit in Figure E)

0.0mJ

400V

500V

600V

700V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses as

a function of collector emitter

voltage

(inductive load, TJ=175°C, VGE=0/15V,

IC=40A, RG=12Ω,

Dynamic test circuit in Figure E)

IFAG IPC TD VLS

8

Rev. 2.4 23.09.2014

Share Link: