SY8009 查看數據表（PDF） - Unspecified
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SY8009 Datasheet PDF : 6 Pages
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SY8009A/SY8009B
Electrical Characteristics
(VIN = 5V, VOUT = 2.5V, L = 2.2uH, COUT = 10uF, TA = 25°C, unless otherwise specified)
Parameter
Input Voltage Range
Quiescent Current
Shutdown Current
Feedback Reference Voltage
FB Input Current
PFET RON
NFET RON
PFET Current Limit
EN rising threshold
EN falling threshold
Input UVLO threshold
UVLO hysteresis
Oscillator Frequency
Min ON Time
Max Duty Cycle
Thermal Shutdown
Temperature
Symbol
VIN
IQ
ISHDN
VREF
IFB
RDS(ON),P
RDS(ON),N
ILIM
VENH
VENL
VUVLO
VHYS
FOSC
Test Conditions
IOUT=0, VFB=VREF ⋅ 105%
EN=0
VFB=VIN
SY8009A
SY8009B
SY8009A
SY8009B
SY8009A
SY8009B
IOUT=200mA, SY8009A
IOUT=500mA, SY8009B
TSD
Min Typ Max Unit
3
5.5 V
80
µA
0.1 1 µA
0.588 0.6 0.612 V
-50
50 nA
180
mΩ
100
mΩ
120
mΩ
80
mΩ
1.8
A
2.5
A
1.5
V
0.4 V
2.7 V
0.1
V
1.5
MHz
1
MHz
50
ns
100
%
160
°C
Note 1: Stresses listed as the above “Absolute Maximum Ratings” may cause permanent damage to the device.
These are for stress ratings. Functional operation of the device at these or any other conditions beyond those
indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may remain possibility to affect device reliability.
Note 2: θ JA is measured in the natural convection at TA = 25°C on a low effective single layer thermal conductivity
test board of JEDEC 51-3 thermal measurement standard. Pin 2 of SOT23-5/SSOT-23-6 packages is the case
position for θ JC measurement. Test condition: Device mounted on 2” x 2” FR-4 substrate PCB, 2oz copper, with
minimum recommended pad on top layer and thermal vias to bottom layer ground plane
Note 3: The device is not guaranteed to function outside its operating conditions.
SY8009A/B Rev1.0
Silergy Corp. Confidential- Prepared for Customer Use Only 3
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