MKT1820727406MW 查看數據表（PDF） - Vishay Semiconductors

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MKT1820727406MW

DC Film Capacitors MKT Radial Potted Type

Vishay Semiconductors 

www.vishay.com

MKT1820

Vishay Roederstein

GROUP C INSPECTION REQUIREMENTS

SUB-CLAUSE NUMBER AND TEST

CONDITIONS

SUB-GROUP C2

4.11.3 Final measurements

Capacitance

PERFORMANCE REQUIREMENTS

|C/C|  5 % of the value measured in 4.11.1.

Tangent of loss angle

for C  1 μF at 10 kHz

for 1 μF < C < 100 μF at 1 kHz

for C  100 μF at 100 Hz

Increase of tan 

 0.005 for C  1 μF or

 0.003 for C > 1 μF

 0.004 for C  100 μF

Compared to values measured in 4.11.1

SUB-GROUP C3

4.12 Endurance

Insulation resistance

Duration: 2000 h

1.25 x URDC at 85 °C

1.0 x URDC at 100 °C

0.6 x URDC at 125 °C 

Duration: 200 h

0.3 x URDC at 150 °C 

(not applicable for pitch 37.5 mm)

 50 % of values specified in section

“Insulation Resistance” of this specification

4.12.1 Initial measurements

Capacitance

Tangent of loss angle:

for C  1 μF at 10 kHz

for 1 μF < C < 100 μF at 1 kHz

for C  100 μF at 100 Hz

4.12.5 Final measurements

Visual examination

No visible damage

Legible marking

Capacitance

|C/C|  5 % compared to values measured

in 4.12.1

Tangent of loss angle

For C  1 μF at 10 kHz

For 1 μF < C < 100 μF at 1 kHz

For C  100 μF at 100 Hz

Increase of tan :

 0.003 for C  1 μF or

 0.002 for 1 μF < C < 100 μF

 0.004 for C  100 μF

Compared to values measured in 4.12.1

SUB-GROUP C4

4.13 Charge and discharge

Insulation resistance

10 000 cycles

Charged to URDC

Discharge resistance:



R



=

C-------x-----K------x---U-----Rd----U--------d---t-----R--



K = 5 for pitch  27.5 mm

K = 1.5 for pitch 37.5 mm/52.5 mm

 50 % of values specified in section

“Insulation Resistance” of this specification

4.13.1 Initial measurements

Capacitance



Tangent of loss angle:

for C  1 μF at 10 kHz

for 1 μF < C < 100 μF at 1 kHz

for C  100 μF at 100 Hz

4.13.3 Final measurements

Capacitance

|C/C|  3 % compared to values measured

in 4.13.1

Tangent of loss angle:

Increase of tan :

 0.003 for C  1 μF or

 0.002 for C > 1 μF

 0.004 for C  100 μF 

Compared to values measured in 4.13.1

Insulation resistance

 50 % of values specified in section

“Insulation Resistance” of this specification

Revision: 02-Feb-18

16

Document Number: 26011

For technical questions, contact: dc-film@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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