R1LV1616H-I 查看數據表（PDF） - Renesas Electronics

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R1LV1616H-I

Wide Temperature Range Version 16 M SRAM (1-Mword × 16-bit / 2-Mword × 8-bit)

Renesas Electronics 

R1LV1616H-I Series

Absolute Maximum Ratings

Parameter

Symbol

Power supply voltage relative to VSS

Terminal voltage on any pin relative to VSS

Power dissipation

Storage temperature range

VCC

VT

PT

Tstg

Storage temperature range under bias

Tbias

Notes: 1. VT min: −2.0 V for pulse half-width ≤ 10 ns.

2. Maximum voltage is +4.6 V.

Value

Unit

−0.5 to +4.6

V

−0.5*1 to VCC + 0.3*2 V

1.0

W

−55 to +125

°C

−40 to +85

°C

DC Operating Conditions

Parameter

Symbol Min

Typ

Max

Unit

Note

Supply voltage

Input high voltage

Input low voltage

Ambient temperature range

VCC

2.7

3.0

3.6

V

VSS

0

0

0

V

VIH

2.2



VCC + 0.3 V

VIL

−0.3



0.6

V

1

Ta

−40



+85

°C

Note: 1. VIL min: −2.0 V for pulse half-width ≤ 10 ns.

Rev.1.01, Nov.18.2004, page 7 of 19

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