NUF6105FCT1G(2005) 查看數據表（PDF） - ON Semiconductor
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NUF6105FCT1G Datasheet PDF : 6 Pages
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NUF6105FC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
VRWM Maximum Reverse Working Voltage
VBR
IZ = 10 mA
IR
VRWM = 3.3 V per line
RI/O
IR = 20 mA
Cd
VR = 2.5 V, f = 1 MHz (Note 1 and 2)
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the diode capacitance (Cd).
Min
Typ
Max
Unit
−
−
5.0
V
6.0
7.0
8.0
V
−
−
0.1
mA
80
100
120
W
−
27
−
pF
TYPICAL PERFORMANCE CURVES
0
(TA = 25°C unless otherwise specified)
0
−5
−10
−10
−20
−15
−20
−30 Channel 3 to Channel 4
−25
Channel 1 or Channel 6
−30
−35 Channel 2 or Channel 5
−40
−45
−50
10
Channel 3
or Channel 4
100
1000
10000
FREQUENCY (MHz)
−40
Channel 1 to Channel 2
−50
−60
−70
−80
10
100
1000
FREQUENCY (MHz)
Figure 1. Insertion Loss Curve
(S21 Measurement)
Figure 2. Analog Crosstalk Curve
(S41 Measurement)
10000
2.0
1.5
1.0
0.5
0
0
1.0
2.0
3.0
4.0
5.0
REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance Cd at 2.5 V)
105
104
103
102
101
100
99
98
97
96
95
−40
−15
10
35
60
85
TEMPERATURE (°C)
Figure 4. Resistance Over Temperature
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