13N06L 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
13N06L Datasheet PDF : 10 Pages
| |||
Package Marking and Ordering Information
Part Number
FQP13N06L
Top Mark
FQP13N06L
Package Packing Method
TO-220
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted.
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 μA
60
--
--
ΔBVDSS Breakdown Voltage Temperature
/ ΔTJ Coefficient
ID = 250 μA, Referenced to 25°C -- 0.05
--
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
--
--
1
--
--
10
IGSSF
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
--
--
100
IGSSR
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 6.8 A
VGS = 5 V, ID = 6.8 A
VDS = 25 V, ID = 6.8 A
(
1.0 --
2.5
-- 0.088 0.11
-- 0.110 0.14
--
7
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 270 350
--
95
125
--
17
23
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 30 V, ID = 6.8 A,
RG = 25 Ω
--
8
25
--
90
190
--
20
50
(Note 4)
--
40
90
VDS = 48 V, ID = 13.6 A,
-- 4.8 6.4
VGS = 5 V
-- 1.6
--
(Note 4) --
2.7
--
V
V/°C
μA
μA
nA
nA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 13.6 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 13.6 A,
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 570 μH, IAS = 13.6 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
13.6
A
--
--
54.4
A
--
--
1.5
V
--
45
--
ns
--
45
--
nC
©2001 Fairchild Semiconductor Corporation
2
FQP13N06L Rev. C1
www.fairchildsemi.com
Share Link: 