16N50 查看數據表（PDF） - Unisonic Technologies

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16N50

16 A, 500 V N-CHANNEL POWER MOSFET

Unisonic Technologies 

16N50

 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate- Source Leakage Current

Forward

Reverse

BVDSS

IDSS

IGSS

ID=250µA, VGS=0V

VDS=500V, VGS=0V

VDS=400V, VGS=0V, TC=125°C

VGS=+30V, VDS=0V

VGS=-30V, VDS=0V

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

VGS(TH)

RDS(ON)

VDS=VGS, ID=250µA

VGS=10V, ID=8A

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VGS=0V, VDS=25V, f=1.0MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall-Time

QG

QGS

QGD

tD(ON)

tR

tD(OFF)

tF

VGS=10V, VDS=50V, ID=1.3A

(Note 1, 2)

VDD=30V, ID=0.5A, RG=25Ω

(Note 1, 2)

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

IS

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS=16A, VGS=0V

Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

Power MOSFET

MIN TYP MAX UNIT

500

V

1 µA

10 µA

+100 nA

-100 nA

2.0

4.0 V

0.31 0.38 Ω

1100 1945 pF

235 310 pF

25 30 pF

32 45 nC

8.5

nC

14

nC

70 90 ns

200 310 ns

750 900 ns

380 500 ns

16 A

64 A

1.4 V

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 6

QW-R502-532.F

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