2SA1205 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SA1205 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.12A
ICBO
Collector cut-off current
VCB=-70V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
hFE
DC current gain
IC=-5A ; VCE=-0.5V
fT
Transition frequency
IE=3A ; VCE=-12V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-5A;RL=4Ω
IB1=-IB2=-0.12A
VCC=-20V
Product Specification
2SA1205
MIN TYP. MAX UNIT
-50
V
-0.5
V
-0.1 mA
-0.1 mA
40
20
MHz
0.60
μs
0.50
μs
0.25
μs
2
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