KSB1366YTU 查看數據表（PDF） - Fairchild Semiconductor

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产品描述 (功能)

生产厂家

KSB1366YTU

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Typical Characteristics

-5

-4

-3

I

B

=

-80mA

IB

=

-70mA

I

B

= -60mA

IB = -50mA

IB = -40mA

IB = -30mA

-2

IB = -20mA

IB = -10mA

-1

IB = 0

-0

-0

-1

-2

-3

-4

-5

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

-10

IC = 10 IB

-1

-0.1

-0.01

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

-10

ICmax(pulse)

ICmax(DC)

-1

100mS 10ms 1mS

1S

DC

-0.1

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Safe Operating Area

©2000 Fairchild Semiconductor International

1000

100

VCE = -5V

10

1

-0.01

-0.1

-1

-10

IC[A], COLLECTOR CURRENT

Figure 2. DC current Gain

-4

VCE = -5V

-3

-2

-1

-0

-0.0

-0.4

-0.8

-1.2

-1.6

VBE[V], BASE-EMITTER VOLTAGE

Figure 4. Base-Emitter On Voltage

40

35

30

25

20

15

10

5

0

0

25

50

75

100

125

150

175

200

TC[oC], CASE TEMPERATURE

Figure 6. Power Derating

Rev. A, February 2000

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