DT28F800F3B120 查看數據表（PDF） - Intel

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DT28F800F3B120

FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT

Intel 

E

FAST BOOT BLOCK DATASHEET

8.4 DC Characteristics—Extended Temperature (Continued)

VCC 2.7 V–3.6 V 2.7 V–2.85 V 2.7 V–3.3 V

VCCQ 2.7 V–3.6 V 1.65 V–2.5 V 1.8 V–2.5 V

Sym

Parameter Note Min Max Min Max Min Max Unit Test Conditions

VIL Input Low

Voltage

VIH Input High

Voltage

VOL Output Low

Voltage

–0.4 0.4 –0.2 0.2 –0.2 0.2 V

VCCQ

–

0.4V

0.10

VCCQ

–

0.2V

-0.10

0.10

VCCQ

–

0.2V

-0.10

0.10

V

V VCC = VCCMin

VCCQ = VCCQMin

IOL = 100 µA

VOH Output High

Voltage

VPPLK VPP Lock-Out

Voltage

VCCQ

–

0.1V

VCCQ

–

0.1V

VCCQ

–

0.1V

2 1.5 1.5

1.5

1.5

V VCC = VCCMin

VCCQ = VCCQMin

IOH = –100 µA

V Complete Write

Protection

VPP1 VPP during

2 2.7 3.6

V

VPP2 Program and

2

2.7 2.85

V

VPP3 Erase Operations 2

2.7 3.3 V

VPP4

2,5 11.4 12.6 11.4 12.6 11.4 12.6 V

VLKO VCC Prog/Erase

1.5

1.5

1.5

V

Lock Voltage

VLKO2 VCCQ Prog/Erase

1.2

1.2

1.2

V

Lock Voltage

NOTES:

1. All currents are in RMS unless otherwise noted. Typical values at normal VCC, T = +25 °C.

2. ICCES is specified with device deselected. If device is read while in erase suspend, current draw is sum of ICCES and ICCR.

3. Erases and program operations are inhibited when VPP ≤ VPPLK, and not guaranteed outside the valid VPP ranges of VPPH1

and VPPH2.

4. Sampled, not 100% tested.

5. Automatic Power Savings (APS) reduces ICCR to approximately standby levels, in static operation.

6. Applying VPP = 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks

and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80 hours maximum.

7. The specification is the sum of VCC and VCCQ currents.

PRODUCT PREVIEW

31

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