FQD30N06TF 查看數據表（PDF） - Fairchild Semiconductor
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FQD30N06TF Datasheet PDF : 9 Pages
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Typical Characteristics
V
Top : 15.0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
101
100
10-1
※ Notes :
1. 250μ s PulseTest
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
100
80
60
V = 10V
GS
V = 20V
GS
40
20
※ Note : TJ = 25℃
0
0
20
40
60
80
100
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2000
1500
1000
C
oss
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
500
C
rss
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
101
150℃
25℃
-55℃
※ Notes :
1.
2.
2V5DS0μ=s25PVulse
Test
100
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
0.4
150℃
25℃
※ Notes :
1.
2.
2V5G0Sμ=s0VPulse
Test
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
10
VDS = 30V
V = 48V
DS
8
6
4
2
※ Note : ID = 30A
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2009 Fairchild Semiconductor Corporation
Rev. A2. January 2009
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