IMC002FLSA 查看數據表（PDF） - Intel

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IMC002FLSA

SERIES 2 FLASH MEMORY CARDS

Intel 

SERIES 2 FLASH MEMORY CARDS

COMMON AND ATTRIBUTE MEMORY AC CHARACTERISTICS CE -Controlled Write Operations(1)

Symbol

JEDEC

PCMCIA

Parameter

Notes Min Max Unit

tAVAV

tELEH

tAVEL

tAVEH

tVPEH

tWLEH

tDVEH

tEHDX

tEHAX

tEHRL

tEHQV1

tWC

tw (WE)

tsu (A)

tsu (A-WEH)

tvps

tsu (CE-WEH)

tsu (D-WEH)

th (D)

trec (WE)

Duration of

Data Write

Write Cycle Time

Chip Enable Pulse Width

Address Setup Time

Address Setup Time for CE

VPP Setup to CE Going High

Write Enable Setup Time for CE

Data Setup Time for CE

Data Hold Time

Write Recover Time

CE High to RDY BSY

Duration of Data Write Operation

1

150

ns

1

80

ns

1

20

ns

1

100

ns

1

100

ns

1

100

ns

1

50

ns

1

20

ns

1

20

ns

1

120 ns

1

6

ms

tEHQV2 Duration of

Erase

Duration of Block Erase Operation

1

03

sec

tQVVL

VPP Hold from Operation Complete

12

0

ns

tEHGL

th (OE-WE)

Write Recovery before Read

1

10

ns

tRHEL

Reset-PwrDwn Recovery to CE Going Low

1

ms

NOTES

1 Read timing characteristics during erase and data write operations are the same as during read-only operations Refer to

AC Characteristics for Read-Only operations

2 Refer to text on Data-Write and Block-Erase Operations

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