AM29LV160DB-70SE 查看數據表（PDF） - Advanced Micro Devices

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AM29LV160DB-70SE

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

hardware reset immediately terminates the program-

ming operation. The Byte Program command se-

quence should be reinitiated once the device has reset

to reading array data, to ensure data integrity.

Programming is allowed in any sequence and across

sector boundaries. A bit cannot be programmed

from a “0” back to a “1”. Attempting to do so may halt

the operation and set DQ5 to “1,” or cause the Data#

Polling algorithm to indicate the operation was suc-

cessful. However, a succeeding read will show that the

data is still “0”. Only erase operations can convert a “0”

to a “1”.

Unlock Bypass Command Sequence

The unlock bypass feature allows the system to pro-

gram bytes or words to the device faster than using the

standard program command sequence. The unlock by-

pass command sequence is initiated by first writing two

unlock cycles. This is followed by a third write cycle

containing the unlock bypass command, 20h. The de-

vice then enters the unlock bypass mode. A two-cycle

unlock bypass program command sequence is all that

is required to program in this mode. The first cycle in

this sequence contains the unlock bypass program

command, A0h; the second cycle contains the program

address and data. Additional data is programmed in

the same manner. This mode dispenses with the initial

two unlock cycles required in the standard program

command sequence, resulting in faster total program-

ming time. Table 9 shows the requirements for the com-

mand sequence.

During the unlock bypass mode, only the Unlock By-

pass Program and Unlock Bypass Reset commands

are valid. To exit the unlock bypass mode, the system

must issue the two-cycle unlock bypass reset com-

mand sequence. The first cycle must contain the data

90h; the second cycle the data 00h. Addresses are

don’t care for both cycles. The device then returns to

reading array data.

Figure 3 illustrates the algorithm for the program oper-

ation. See the Erase/Program Operations table in “AC

Characteristics” for parameters, and to Figure 17 for

timing diagrams.

START

Write Program

Command Sequence

Embedded

Program

algorithm

in progress

Data Poll

from System

Verify Data?

No

Yes

Increment Address

No

Last Address?

Yes

Programming

Completed

Note: See Table 9 for program command sequence.

Figure 3. Program Operation

Chip Erase Command Sequence

Chip erase is a six bus cycle operation. The chip erase

command sequence is initiated by writing two unlock

cycles, followed by a set-up command. Two additional

unlock write cycles are then followed by the chip erase

command, which in turn invokes the Embedded Erase

algorithm. The device does not require the system to

preprogram prior to erase. The Embedded Erase algo-

rithm automatically preprograms and verifies the entire

memory for an all zero data pattern prior to electrical

erase. The system is not required to provide any con-

trols or timings during these operations. Table 9 shows

the address and data requirements for the chip erase

command sequence.

Any commands written to the chip during the Embed-

ded Erase algorithm are ignored. Note that a hardware

reset during the chip erase operation immediately ter-

minates the operation. The Chip Erase command se-

quence should be reinitiated once the device has

returned to reading array data, to ensure data integrity.

The system can determine the status of the erase op-

eration by using DQ7, DQ6, DQ2, or RY/BY#. See

Am29LV160D

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