AM29F160BT-90SIB 查看數據表（PDF） - Advanced Micro Devices

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AM29F160BT-90SIB

16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Sector Erase Time

Chip Erase Time

Byte Programming Time

Word Programming Time

Chip Programming Time

(Note 3)

Typ (Note 1)

0.7

25

9

11

Byte Mode

18

Word Mode

12

Max (Note 2)

15

300

360

54

36

Unit

Comments

s

Excludes 00h programming

s

prior to erasure (Note 4)

µs

µs

Excludes system level

s

overhead (Note 5)

s

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Table 9 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Description

Input voltage with respect to VSS on all pins except I/O pins

(including A9, OE#, and RESET#)

Input voltage with respect to VSS on all I/O pins

VCC Current

Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.

Min

–1.0 V

–1.0 V

–100 mA

Max

12.5 V

VCC + 1.0 V

+100 mA

TSOP AND SO PIN CAPACITANCE

Parameter

Symbol

Parameter Description

CIN

COUT

CIN2

Input Capacitance

Output Capacitance

Control Pin Capacitance

Notes:

1. Sampled, not 100% tested.

2. Test conditions TA = 25°C, f = 1.0 MHz.

Test Setup

VIN = 0

VOUT = 0

VIN = 0

Typ Max Unit

6

7.5

pF

8.5

12

pF

7.5

9

pF

DATA RETENTION

Parameter

Minimum Pattern Data Retention Time

Test Conditions

Min

150°C

10

125°C

20

Unit

Years

Years

42

Am29LV160B

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