AM29LV017B-80RFI 查看數據表（PDF） - Advanced Micro Devices

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AM29LV017B-80RFI

16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

ILI

Input Load Current

ILIT

A9 Input Load Current

ILO

Output Leakage Current

ICC1

VCC Active Read Current

(Note 1)

VIN = VSS to VCC,

VCC = VCC max

VCC = VCC max; A9 = 12.5 V

VOUT = VSS to VCC,

VCC = VCC max

VCC = VCC max;

CE# = VIL, OE# = VIH

5 MHz

1 MHz

±1.0

µA

35

µA

±1.0

µA

9

16

mA

2

4

ICC2

VCC Active Write Current

(Notes 2 and 4)

VCC = VCC max;

CE# = VIL, OE# = VIH

15

30

mA

ICC3

VCC Standby Current

VCC = VCC max;

CE#, RESET# = VCC±0.3 V

0.2

5

µA

ICC4

VCC Reset Current

VCC = VCC max;

RESET# = VSS ± 0.3 V

0.2

5

µA

ICC5

Automatic Sleep Mode (Note 3)

VCC = VCC max; VIH = VCC ± 0.3 V;

VIL = VSS ± 0.3 V

0.2

5

µA

VIL

Input Low Voltage

–0.5

0.8

V

VIH

Input High Voltage

0.7 x VCC

VCC + 0.3 V

VID

Voltage for Autoselect and

Temporary Sector Unprotect

VCC = 3.3 V

11.5

12.5

V

VOL

VOH1

VOH2

VLKO

Output Low Voltage

Output High Voltage

Low VCC Lock-Out Voltage

(Note 4)

IOL = 4.0 mA, VCC = VCC min

IOH = –2.0 mA, VCC = VCC min

IOH = –100 µA, VCC = VCC min

0.85 VCC

VCC–0.4

2.3

0.45

V

V

2.5

V

Notes:

1. The ICC current listed is typically is less than 2 mA/MHz, with OE# at VIH. Typical specifications are for VCC = 3.0 V.

2. ICC active while Embedded Erase or Embedded Program is in progress.

3. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode

current is 200 nA.

4. Not 100% tested.

25

Am29LV017B

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